Datasheet MTV32N20E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTV32N20E	TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading perfo	Motorola Semiconductors

MTV32N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTV32N25E	Power Field Effect Transistor MTV32N25E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconducto	ON Semiconductor
MTV32N20E	TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability wit	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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