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Datasheet MTP75N06HD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTP75N06HD | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP75N06HD/D
Designer's
HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. T |
 Motorola Semiconductors |
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| 1 | MTP75N06HD | Power MOSFET ( Transistor ) MTP75N06HD
Preferred Device
Power MOSFET
75 A, 60 V, N−Channel, TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high� |
 ON Semiconductor |
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