|
|
Datasheet MTE300P10KN3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTE300P10KN3 | P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C135N3 Issued Date : 2015.09.07
Revised Date : Page No. : 1/9
-100V P-Channel Enhancement Mode MOSFET
MTE300P10KN3
Features
• Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High density cell design for |
CYStech Electronics |
MTE300P10 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTE300P10KN3 | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics |
|
MTE300P10KJ3 | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics |
|
MTE300P10J3 | P-Channel Enhancement Mode Power MOSFET |
CYStech Electronics |
Esta página es del resultado de búsqueda del MTE300P10KN3. Si pulsa el resultado de búsqueda de MTE300P10KN3 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |