Datasheet MTE300P10KJ3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTE300P10KJ3	P-Channel Enhancement Mode Power MOSFET Spec. No. : C135J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10KJ3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.5A 393mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate	CYStech Electronics

MTE300P10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTE300P10KN3	P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C135N3 Issued Date : 2015.09.07 Revised Date : Page No. : 1/9 -100V P-Channel Enhancement Mode MOSFET MTE300P10KN3 Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology • High dens	CYStech Electronics
MTE300P10KJ3	P-Channel Enhancement Mode Power MOSFET Spec. No. : C135J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10KJ3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.5A 393mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement �	CYStech Electronics
MTE300P10J3	P-Channel Enhancement Mode Power MOSFET Spec. No. : C136J3 CYStech Electronics Corp. Issued Date : 2015.09.04 Revised Date : P-Channel Enhancement Mode Power MOSFET MTE300P10J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-5A -100V -6.6A 368mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement �	CYStech Electronics

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Número de pieza	Descripción	Fabricantes	PDF
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