Datasheet MTE130N20E3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTE130N20E3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20E3 Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No. : 1/ 8 Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package BVDSS ID @ VGS=10V, TC=25	CYStech

MTE130N2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTE130N20J3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE130N20J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(TYP) @ VGS=10V, ID=9A 200V 18A 1.9A 156mΩ Features • Low Gate Charg	CYStech
MTE130N20KJ3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KJ3 Spec. No. : C952J3 Issued Date : 2014.02.27 Revised Date : 2014.03.05 Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD Diode Protected Gate • Fast Switching Characte	CYStech
MTE130N20KFP	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20KFP Spec. No. : C952FP Issued Date : 2013.12.24 Revised Date : Page No. : 1/ 8 BVDSS 200V ID @ VGS=10V 17A RDS(ON)@VGS=10V, ID=9A 134 mΩ(typ) Features • ESD protected • Simple Drive Requirement	CYStech

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Número de pieza	Descripción	Fabricantes	PDF
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