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MTE011N10RH8 전자부품 데이터시트



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MTE011N10RH8  

Cystech Electonics
Cystech Electonics

MTE011N10RH8

N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2016.07.05 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTE011N10RH8 BVDSS 100V ID@VGS=10V, TC=25°C 45A ID@VGS=10V, TA=25°C 15A RDSON(TYP) VGS=10V, ID=11.5A 9.5mΩ




관련 부품 MTE011N10R 상세설명

MTE011N10RJ3  

  
N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169J3 Issued Date : 2016.03.09 Revised Date : 2016.04.27 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE011N10RJ3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead p



Cystech Electonics
Cystech Electonics

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MTE011N10RE3  

  
N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169E3 Issued Date : 2015.12.04 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RE3 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant



Cystech Electonics
Cystech Electonics

PDF



MTE011N10RFP  

  
N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169FP Issued Date : 2015.12.01 Revised Date : 2016.04.27 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE011N10RFP BVDSS Features ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C  Low On Resistance RDS(ON)@VGS=10V, ID=11A  Simple Drive Require



Cystech Electonics
Cystech Electonics

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