MTBA6C15J4
CYStech
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C938J4 Issued Date : 2014.10.15 Revised Date : 2014.10.28 Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C15J4 BVDSS
ID @VGS=10V(-10V)
Features
• Low gate charge • Simple drive requirement • Pb-
MTBA6C15Q8
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C938Q8 Issued Date : 2014.12.01 Revised Date : Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA6C15Q8 BVDSS
N-CH 150V
ID @ TA=25°C, VGS=10V(-10V) 1.8A
ID @ TA=70°C, VGS=10V(-10V) 1.5A
ID @ TC=25°C, VGS=10V(-10V) 3.2A
ID @ TC=1
CYStech
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MTBA6C15H8
P- & N-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2016.09.12 Page No. : 1/14
N- And P-Channel Enhancement Mode MOSFET
MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ)@VGS=4.5V(-4.5V)
Features
• Simple dr
CYStech Electronics
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