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Datasheet MTBA6C12J4 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | MTBA6C12J4 | N & P-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C973J4 Issued Date : 2014.06.13 Revised Date : 2014.10.02 Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTBA6C12J4 BVDSS
ID @ VGS=10V(-10V)
RDSON(typ.) @VGS=(-)10V
Features
RDSON(typ.) @VGS=(-)4.5V
• Low Gate Charge
• Simple Drive Requ |
CYStech |
MTBA6C1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
MTBA6C12Q8 | N & P-Channel Enhancement Mode Power MOSFET |
CYStech |
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MTBA6C15Q8 | N & P-Channel Enhancement Mode Power MOSFET |
CYStech |
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MTBA6C15J4 | N & P-Channel Enhancement Mode Power MOSFET |
CYStech |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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