MTBA5C10H8
CYStech
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C744H8 Issued Date : 2015.03.27 Revised Date : 2015.03.30 Page No. : 1/13
N- AND P-Channel Enhancement Mode MOSFET
MTBA5C10H8 BVDSS ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON(typ)@VGS=10V(-10V)
RDSON(typ
MTBA5C10V8
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C744V8 Issued Date : 2014.11.03 Revised Date : Page No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10V8 BVDSS
N-CH 100V
ID@VGS=10V(-10V)
2.3A
RDSON@VGS=10V(-10V) typ. 126.5mΩ
RDSON@VGS=4.5V(-4.5V) typ. 130mΩ
P-CH -100V -1.7A 216
CYStech
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MTBA5C10AQ8
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2014.01.03 Page No. : 1/12
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10AQ8
N-CH P-CH
BVDSS
100V -100V
ID 2.4A -2.2A
Description
RDSON(MAX.) 150mΩ 220mΩ
The MTBA5C10AQ8 consists of a N-ch
CYStech
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MTBA5C10Q8
N & P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2011.10.03 Page No. : 1/10
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10Q8
N-CH P-CH
BVDSS
100V -100V
ID 3A -2.5A
RDSON(MAX.) 150mΩ 250mΩ
Description
The MTBA5C10Q8 consists of a N-channe
CYStech
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