|
|
Datasheet MTB1N100E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MTB1N100E | TMOS POWER FET 1.0 AMPERES 1000 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB1N100E/D
™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount
Designer's
MTB1N100E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a large |
 Motorola Semiconductors |
 |
MTB1N1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MTB1N100E | TMOS POWER FET 1.0 AMPERES 1000 VOLTS |
Motorola Semiconductors |
|
| Esta página es del resultado de búsqueda del MTB1N100E. Si pulsa el resultado de búsqueda de MTB1N100E se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |