Datasheet MTB15N06E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB15N06E	TMOS POWER FET 15 AMPERES MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB15N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB15N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a large	Motorola Semiconductors

MTB15N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB15N06E	TMOS POWER FET 15 AMPERES MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB15N06E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB15N06E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capabilit	Motorola Semiconductors
MTB15N06V	Power Field Effect Transistor MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new tech	ON Semiconductor
MTB15N06V	TMOS POWER FET 15 AMPERES MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB15N06V/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new tec	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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