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Datasheet MTB1306 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | MTB1306 | TMOS POWER FET 75 AMPERES MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB1306/D
Advance Information
HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount pack |
 Motorola Semiconductors |
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| 1 | MTB1306 | Power MOSFET ( Transistor ) MTB1306
Preferred Device
Power MOSFET 75 Amps, 30 Volts, Logic Level
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with fast recovery time. Designed for
low voltag |
 ON Semiconductor |
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