MTB110P08KN3
Cystech Electonics
P-Channel Enhancement Mode MOSFETCYStech Electronics Corp.
Spec. No. : C123N3 Issued Date : 2015.11.09
Revised Date : Page No. : 1/9
-80V P-Channel Enhancement Mode MOSFET
MTB110P08KN3 BVDSS ID @ VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A
RDSON@VGS=-4.5V,ID=-1A
-80V -2.2A
104mΩ(typ)
141mΩ
MTB110P08KJ3
P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
• Low Gate Charge • Simple Driv
Cystech Electonics
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MTB110P08KN6
P-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A
-80V -3.7A -2.9A 104mΩ 141mΩ
Features
Cystech Electonics
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