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MTB080P06Q8  

Cystech Electonics
Cystech Electonics

MTB080P06Q8

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069Q8 Issued Date : 2016.01.29 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06Q8 BVDSS ID@ VGS=-10V, TA=25°C RDSON @VGS=-10V, ID=-4A RDSON @VGS=-4.5V, ID=-3A -60V -4A 80.3mΩ(typ.) 108m




관련 부품 MTB080P06 상세설명

MTB080P06M3  

  
P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069M3 Issued Date : 2016.04.19 Revised Date : Page No. : 1/9 -60V P-Channel Enhancement Mode MOSFET MTB080P06M3 BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-3A RDSON@VGS=-4.5V, ID=-3A -60V -3.2A 83mΩ(typ.) 112mΩ(typ.) Features • Single Drive Requirem



Cystech Electonics
Cystech Electonics

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MTB080P06N6  

  
P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069N6 Issued Date : 2016.03.24 Revised Date : 2016.04.15 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C RDSON(TYP) VGS=-10V, ID=-3A VGS=-4.5V, ID=-2.7A -60V -3.8A -3.0A 79mΩ 107mΩ



Cystech Electonics
Cystech Electonics

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MTB080P06N3  

  
P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 BVDSS ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.7A -60V -2.5A 80mΩ 109mΩ Features •Advanced trench process technolog



Cystech Electonics
Cystech Electonics

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MTB080P06L3  

  
P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069L3 Issued Date : 2016.03.14 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB080P06L3 BVDSS ID @ TA=25°C, VGS=-10V RDSON@VGS=-10V, ID=-4A RDSON@VGS=-4.5V, ID=-2A Features • Low Gate Charge • Simple Drive Requirement • Pb-free



Cystech Electonics
Cystech Electonics

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MTB080P06J3  

  
P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode Power MOSFET MTB080P06J3 BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-8A -60V -12.5A 82.5mΩ(typ) 107mΩ(typ) Features • Low Gate Charge



Cystech Electonics
Cystech Electonics

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