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CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.02.19 Revised Date : 2016.02.22 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 12.4mΩ 16.8mΩ Features
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec. No. : C143Q8 Issued Date : 2015.11.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Haloge
CYStech Electronics Corp. Spec. No. : C143N3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9 30V N-Channel Enhancement Mode MOSFET MTB020N03KN3 BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=5A RDSON@VGS=4.5V, ID=4A 30V 5.9A 17.1mΩ(typ) 21.1mΩ(typ) Features • Simple drive req
CYStech Electronics Corp. Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 1/9 30V N-channel Enhancement Mode MOSFET MTB020N03KL3 BVDSS ID@VGS=10V, TA=25°C RDSON@VGS=10V, ID=4A RDSON@VGS=4.5V, ID=3A 30V 7.4A 21.4mΩ (typ) 25.7mΩ (typ) Features • Single Drive R
CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB020N03KJ3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=10A Features VGS=4V, ID=10A Low Gate
CYStech Electronics Corp. 30V N-Channel Enhancement Mode MOSFET MTB020N03KM3 Spec. No. : C143M3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 1/9 Features • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package
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