Datasheet MTB015N10RI3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MTB015N10RI3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N10RI3 BVDSS ID@ VGS=10V, TC=25°C 100V 46A RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ) Features • Simple Drive Re	CYStech Electronics

MTB015N10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MTB015N10RQ8	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB015N10RQ8 Spec. No. : C053Q8 Issued Date : 2016.11.02 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated	Cystech Electonics
MTB015N10RI3	N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp. Spec. No. : C053I3 Issued Date : 2016.10.13 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB015N10RI3 BVDSS ID@ VGS=10V, TC=25°C 100V 46A RDS(ON)@VGS=10V, ID=20A 13.5mΩ(typ) RDS(ON)@VGS=4.5V, ID=20A 16.0mΩ(typ) Features	CYStech Electronics
MTB015N10QQ8	N-Channel Enhancement Mode MOSFET CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB015N10QQ8 Spec. No. : C141Q8 Issued Date : 2015.10.13 Revised Date : Page No. : 1/9 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated	Cystech Electonics

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Número de pieza	Descripción	Fabricantes	PDF
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