MTB013N10RQ8
CYStech Electronics
N-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RQ8
Spec. No. : C053Q8 Issued Date : 2016.08.26 Revised Date : 2016.08.29 Page No. : 1/9
Features
• Single Drive Requirement • Low On-resistance • Fast Switching Characteristic
MTB013N10RH8
N-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
Spec. No. : C056H8 Issued Date : 2016.08.29 Revised Date : Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTB013N10RH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
Features
RDSON(TYP)
VGS=10V, ID=15A VGS=4.5V, ID=10A
• Single Drive Requirement • Low On
CYStech Electronics
PDF
MTB013N10RJ3
N-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RJ3
Spec. No. : C056J3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/ 9
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and h
Cystech Electonics
PDF
MTB013N10RE3
N-Channel Enhancement Mode Power MOSFETCYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB013N10RE3
Spec. No. : C056E3 Issued Date : 2016.11.01 Revised Date : Page No. : 1/ 8
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package
BV
Cystech Electonics
PDF