Datasheet MSG33001 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSG33001	SiGe HBT type For low-noise RF amplifier Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 Unit: mm ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equip	Panasonic Semiconductor

MSG33 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSG33001	SiGe HBT type For low-noise RF amplifier Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 Unit: mm ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and dow	Panasonic Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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