Datasheet MSF10N80A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSF10N80A	800V N-Channel MOSFET MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings (Tc=25°C unle	Bruckewell

MSF10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSF10N80A	800V N-Channel MOSFET MSF10N80A 800V N-Channel MOSFET FEATURES Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.05 Ω (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ra	Bruckewell
MSF10N80	800V N-Channel MOSFET MSF10N80 800V N-Channel MOSFET Description The MSF10N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred fo	Bruckewell
MSF10N65	650V N-Channel MOSFET MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred fo	Bruckewell

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