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MSC82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY ∞:1 @ RATED CONDITIONS ft 1.6 GHz TYPICAL NOISE FIGURE 15.5 dB @ 2 GHz POUT = 27 dBm MIN. @ 1.0 GHz .230 4L STUD (S027) hermetically se
MSC82005 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE M
MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●Batter
MSC82003 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS REFRACTORY/GOLD METALLIZATION HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.8 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE M
MSC82001 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . EMITTER BALLASTED REFRACTORY/GOLD METALLIZATION VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 1.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE M
MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection
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