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Datasheet MSC81250M Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MSC81250M | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS MSC81250M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . .
REFRACTORYGOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE |
 STMicroelectronics |
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| 2 | MSC81250M | RF & MICROWAVE TRANSISTORS MSC81250M
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . .
REFRACTORYGOLD METALLIZATION RUGGEDIZED VSWR 20:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P OUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042) hermetically sealed ORDER CODE |
STMicroelectronics |
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| 1 | MSC81250M | NPN SILICON RF POWER TRANSISTOR MSC81250M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MSC81250M is Designed for DME/TACAN Applications up to 1150 MHz.
PACKAGE STYLE .400 2NL FLG
1
2X B C F Ø D 4 x .0 6 2 x 4 5 ° A .0 2 5 x 4 5 °
2 3
G H I J K
E
FEATURES:
• Internal Input/Output Matching Networks • PG = 6.2 dB |
 Advanced Semiconductor |
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