Datasheet MSC80213 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSC80213	NPN RF TRANSISTOR MSC80213 NPN RF TRANSISTOR DESCRIPTION: The ASI MSC80213 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for general purpose Applications up to 2.3 GHz. PACKAGE 230 2L FLG FEATURES: • • Hermetically Sealed Package Gold Metallization MAXIMUM RATINGS IC VCC VE	Advanced Semiconductor

MSC80 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSC8004	HIGH POWER GaAs FET MSC8004 HIGH POWER GaAs FET FEATURES INCLUDE: • FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz • • APPLICATIONS: • S to Ku Ba	Advanced Semiconductor
MSC80195	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS MSC80195 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . . . . EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz POUT = 28 dBm MIN. @ 2.0 GHz .250 2LFL (S011)	STMicroelectronics
MSC8001	High Power GaAs FET MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Mi	Advanced Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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