Datasheet MSC4001 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MSC4001	RF AND MICROWAVE TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS MSC4001 Features • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRI	Advanced Power Technology

MSC4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MSC4606W	P & N-Channel Enhancement Mode Power MOS FET MSC4606W N and P-Channel Enhancement Mode Power MOS FET General Features ● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired �	MORESEMI
MSC49N02X	40V N-Channel MOSFETs MSC49N02X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta	Bruckewell
MSC49N60X	40V N-Channel MOSFETs MSC49N60X 40V N-Channel MOSFETs Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withsta	Bruckewell

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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