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Certificate TH97/10561QM Certificate TW00/17276EM MS20180 to MS20200 PRV : 180 - 200 Volts Io : 20 Ampere FEATURES : * * * * * Guard ring for reverse protection Low power loss High efficiency High surge capacity Pb / RoHS Free Schottky Barrier Rectifiers TO-220AC 0.154(3.91)DIA. 0.415(10.54)MAX.
MS20N06 N-Channel 60-V (D-S) MOSFET Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information Part
Preliminary MS20N04NE P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC conver
DataSheet 4 U .com DataSheet 4 U .com
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