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RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS Features • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 M
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF AND MICROWAVE TRANSISTORS 806-960 MHZ CELLULAR BASE STATIONS MS1454 Features • Gold Metallization • Diffused Emitter Ballasting • Internal Input Matching • Designed for Linear Operation •
RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • 800-900 MHz • 24 VOLTS • COMMON EMITTER • GOLD METALIZATION • INTERNAL INPUT MATCHING • CLASS AB LINEAR OPERATION • POUT = 30 W MIN. WITH 7.5 dB GAIN MS1453 DESCRIPTION: The MS1453 is a gold metallized epitaxi
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS 800-960 MHz BASE STATION APPLICATIONS Features • 800-960 MHz • 24 VOLTS • CLASS AB LINEAR OPERATION • POUT = 15 WATTS • GP = 8.0 dB MINIMUM • COMMON EMITTER CONFIGURATIO
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIE
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