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Datasheet MRF555 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MRF555 | NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF555/D
The RF Line
NPN Silicon RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF frequency range.
• Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = |
 Motorola Semiconductors |
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| 3 | MRF555 | NPN SILICON RF TRANSISTOR MRF555
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range.
FEATURES:
• 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCBO
30 V
PDISS
3.0 W @ TC = 75 °C
TJ -65 °C |
 Advanced Semiconductor |
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| 2 | MRF555 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
• Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro |
 Microsemi |
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| 1 | MRF555 | Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro |
 New Jersey Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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