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Datasheet MPSA29 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MPSA29 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
MPSA29 TRANSISTOR (NPN)
FEATURES z Darlington Transistor
TO – 92
1.EMITTER 2.BASE 3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCES VEBO IC PC RθJA Tj Tstg
Parameter Collecto |
 JCET |
 |
| 5 | MPSA29 | SILICON NPN DARLINGTON TRANSISTORS MPSA28 MPSA29
SILICON NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA28 and MPSA29 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.
MARKING: FU |
 Central Semiconductor |
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| 4 | MPSA29 | NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
MPSA28 / MPSA29
TO-92 Plastic Package
EBC
ABSOLUTE MAXIMUM RATINGS DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage
Colle |
 CDIL |
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| 3 | MPSA29 | NPN Darlington Transistor MPSA29
Discrete POWER & Signal Technologies
MPSA29
C
BE
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.
Absolute Maximum Ratings*
Symbol
VCE |
 Fairchild Semiconductor |
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