MN101CF74F
Panasonic Semiconductor
MN101CF74F / MN101CF74G
MN101C74F, MN101C74G
MN101C74F Mask ROM 96K 6K LQFP100-P-1414, MLGA100-L-1010, QFP100-P-1818B 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)* 62.5 µs (at 1.8 V to 3.6 V, 32 kHz)* * The lower limit for operatio
MN101CF74G
MN101CF74F / MN101CF74G
MN101C74F, MN101C74G
MN101C74F Mask ROM 96K 6K LQFP100-P-1414, MLGA100-L-1010, QFP100-P-1818B 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)* 62.5 µs (at 1.8 V to 3.6 V, 32 kHz)* * The lower limit for operation guarantee for flash memory built-in t
Panasonic Semiconductor
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MN101CF70C
MN101CF70C
MN101C70C
MN101C70C Mask ROM 48K 2K LQFP080-P-1414A, TQFP080-P-1212D (Under planning) 0.1 µs (at 3.0 V to 3.6 V, 10 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz) 62.5 µs (at 1.8 V to 3.6 V, 32 kHz) MN101CF70D FLASH 64K 4K LQFP080-P-1414A (Under development), TQFP080-P-1212D (Un
Panasonic Semiconductor
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MN101CF78A
MN101CF78A
MN101C78A
MN101C78A Mask ROM 32K 1.5K TQFP048-P-0707B 0.100 µs (at 3.0 V to 3.6 V, 10 MHz) 0.118 µs (at 2.7 V to 3.6 V, 8.5 MHz) 0.235 µs (at 1.8 V to 3.6 V, 4.25 MHz)* 62.5 µs (at 1.8 V to 3.6 V, 32 kHz)* * The lower limit for operation guarantee for flash memory built-in
Panasonic Semiconductor
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