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MMFT3055EL  

Motorola Semiconductors
Motorola Semiconductors

MMFT3055EL

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055EL/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withs




관련 부품 MMFT3055 상세설명

MMFT3055VL  

  
TMOS POWER FET 1.5 AMPERES 60 VOLT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055VL/D ™ Data Sheet TMOS V™ SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of



Motorola Semiconductors
Motorola Semiconductors

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MMFT3055ET3  

  
Power MOSFET ( Transistor )

MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery ti



ON Semiconductor
ON Semiconductor

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MMFT3055ET1  

  
Power MOSFET ( Transistor )

MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery ti



ON Semiconductor
ON Semiconductor

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MMFT3055E  

  
Power MOSFET ( Transistor )

MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery ti



ON Semiconductor
ON Semiconductor

PDF



MMFT3055E  

  
MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055E/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche



Motorola Semiconductors
Motorola Semiconductors

PDF



MMFT3055V  

  
TMOS POWER FET 1.7 AMPERES 60 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055V/D Product Preview TMOS V™ SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This



Motorola Semiconductors
Motorola Semiconductors

PDF




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