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Datasheet MMFT3055E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | MMFT3055E | MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT3055E/D
Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt
SOT–223 for Surface Mount
This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche |
 Motorola Semiconductors |
 |
| 4 | MMFT3055E | Power MOSFET ( Transistor ) MMFT3055E
Power MOSFET 1.7 Amp, 60 Volts
N−Channel TMOS E−FETt SOT−223
This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery ti |
 ON Semiconductor |
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| 3 | MMFT3055EL | MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT3055EL/D
Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt
SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and co |
Motorola Semiconductors |
|
| 2 | MMFT3055ET1 | Power MOSFET ( Transistor ) MMFT3055E
Power MOSFET 1.7 Amp, 60 Volts
N−Channel TMOS E−FETt SOT−223
This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery ti |
ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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