Datasheet MMFT1N10E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MMFT1N10E	MEDIUM POWER TMOS FET 1 AMP 100 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche	Motorola Semiconductors

MMFT1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MMFT1N10E	MEDIUM POWER TMOS FET 1 AMP 100 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high ener	Motorola Semiconductors
MMFT1N10	MEDIUM POWER TMOS FET 1 AMP 100 VOLTS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET designed to withstand high ener	Motorola Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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