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Datasheet MMBT5551L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | MMBT5551L | High Voltage Transistors MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique •
Site and Control Change Requirements These Devices are Pb |
 ON Semiconductor |
 |
| 6 | MMBT5551LT1 | TRANSISTOR RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o)
.,LTDCollector-Emiller Voltage:VCEO=160V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR
2.9 1.9 0.95 0.95 0.4
O Unit:mm
CABSOLUTE MAXIMUM RATINGS ICCharacteristic
Collector-B |
 WEJ |
|
| 5 | MMBT5551LT1 | NPN EPITAXIAL PLANAR TRANSISTOR TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature................................................... |
 TGS |
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| 4 | MMBT5551LT1 | NPN Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors
MMBT5551LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: 0.6 Collector-base voltage
A
V(BR)CBO:
180 V
Operating an |
 Tuofeng Semiconductor |
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