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Datasheet MMBT5401L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | MMBT5401L | High Voltage Transistor MMBT5401L, SMMBT5401L, NSVMMBT5401L
High Voltage Transistor
PNP Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are Ro |
 ON Semiconductor |
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| 8 | MMBT5401LT1 | TRANSISTOR RoHS
MMBT5401LT1 TRANSISTOR (PNP)
SOT-23 Plastic-Encapsulate Transistors
Features
DPower dissipation PCM : 0.3 W (Tamb=25OC)
TCollector current .,LICM : -0.6A
Collector-base Voltage V(BR)CBO :-160V
OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC
2.9 1.9 0.95 0.95 0.4 |
 WEJ |
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| 7 | MMBT5401LT1 | PNP EPITAXIAL PLANAR TRANSISTOR TIGER ELECTRONIC CO.,LTD
MMBT5401LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1.
Ab |
 TGS |
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| 6 | MMBT5401LT1 | PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT5401LT1 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
0.3 W (Tamb=25℃)
Collector current
ICM: -0.6 Collector-base voltage
A
V(BR)CBO:
-160 V
Operating and storage junction temperature range
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 Tuofeng Semiconductor |
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