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MMBT5089  

Unisonic Technologies
Unisonic Technologies

MMBT5089

(MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER

UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 3 1 2



MMBT5089  

WEITRON
WEITRON

MMBT5089

Low Noise NPN Transistor

Low Noise NPN Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current-Continuous Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B



MMBT5089  

Samsung
Samsung

MMBT5089

NPN (LOW NOISE TRANSISTOR)




MMBT5089  

Fairchild
Fairchild

MMBT5089

NPN General Purpose Amplifier

2N5088 / MMBT5088 / 2N5089 / MMBT5089 Discrete POWER & Signal Technologies 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 E SOT-23 Mark: 1Q / 1R B NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier



MMBT5089  

CHINA BASE
CHINA BASE

MMBT5089

NPN General Purpose Amplifier

MMBT5089 NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emi



MMBT5089  

SEMTECH
SEMTECH

MMBT5089

NPN General Purpose Amplifier

MMBT5089 NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Collector Emitter Voltage Collector Base Voltage Emi



MMBT5089  

Kexin
Kexin

MMBT5089

NPN General Purpose Amplifier

SMD Type TransistIoCrs NPN General Purpose Amplifier MMBT5088,MMBT5089 Features NPN general purpose amplifier +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit:



MMBT5089  

HORNBY
HORNBY

MMBT5089

NPN Transistors

MMBT5089【NPN Transistors / 200mW / SOT-23】 Features ◆ For low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symbol Collector Base Vol



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