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Elektronische Bauelemente MMBT3906FW PNP Silicon General Purpose Transistor FEATURES · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904FW) · Ideal for Medium Power Amplification and Switching RoHS Compliant Product A L Top View BS COLLECTOR 3 3V 1 BASE 1 2 S
MMBT3906FN3 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volt POWER 250 mWatt FEATURES 0.042(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU
Features BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 0.48mm2 package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile Complementary NPN Type MMBT3904FA Totally Lead-Free & Fully RoHS compliant (Notes
General Purpose Transistor SMD Diodes Specialist MMBT3906-G (PNP) RoHS Device Features -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066
General Purpose Transistor PNP Silicon P b Lead(Pb)-Free Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBT3906 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 Value -40 -40 -5.0 -200 Unit Vdc Vdc Vd
SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transisto
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