MMBT3904LT1
Motorola Semiconductors
General Purpose TransistorMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3904LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT3904LT1
Motorola Preferred Device
3
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector �
MMBT3904LT1
ON
General Purpose Transistor(NPN Silicon)MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VC
MMBT3904LT1
Tuofeng Semiconductor
NPN TransistorShenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.2 Collector-base vol
MMBT3904LT1
Silicon Standard
NPN TransistorFEATURES
Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking:
MMBT3904LT1G
ON
General Purpose Transistor (NPN Silicon)MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VC