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Datasheet MMBT3904L Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | MMBT3904L | General Purpose Transistor(NPN Silicon) MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit |
ON |
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9 | MMBT3904LP | 40V NPN SMALL SIGNAL TRANSISTOR Features
BVCEO > 40V IC = 200mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary PNP Type MMBT3906LP Totally Lead-Free & Fully RoHS Compliant (Notes |
Diodes |
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8 | MMBT3904LT1 | NPN Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.2 Collector-base voltage
A
V(BR)CBO:
60 V
Operating and |
Tuofeng Semiconductor |
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7 | MMBT3904LT1 | NPN Transistor FEATURES
Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃ SOT-23 plastic-encapsulate package Device Marking: AM1
MMBT3904LT1
Transistors (NPN)
ELE |
Silicon Standard |
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Número de pieza | Descripción | Fabricantes | |
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