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Datasheet MMBT2907 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 55 | MMBT2907 | PNP General Purpose Amplifier Production specification
PNP General Purpose Amplifier
FEATURES
z Epitaxial planar die construction. z Ideal for medium power amplification
and switching.
Pb
Lead-free
MMBT2907
APPLICATIONS
z This device is designed as a general purpose amplifier and switching.
ORDERING INFORMATION
Type No.
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 Galaxy Microelectronics |
 |
| 54 | MMBT2907 | PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR
MMBT2907/ALT1
GENERAL PURPOSE TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dissipation: Pc(max)=225mW
Package:SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Symbol Rating
2907 2907A
Collector-Base Voltage
Vcbo
-60
Collector-Emitter V |
 MIC |
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| 53 | MMBT2907 | PNP GENERAL PURPOSE AMPLIFIER PNP GENERAL PURPOSE AMPLIFIER
FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A)
ORDERING INFORMATION
Device
Package
Shipping†
MMBT2907 SOT −23 3000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part or |
 ART CHIP |
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| 52 | MMBT2907 | PNP Silicon Epitaxial Planar Transistor MMBT2907 / MMBT2907A
PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended.
SOT-23 Plastic Package
Absolute M |
 SEMTECH |
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