MMBT2222
TIPTEK
GENERAL PURPOSE NPN TRANSISTORSMMBT2222/MMBT2222A
GENERAL PURPOSE NPN TRANSISTORS
FEATURES HIGH DC CURRENT GAIN EPITAXIAL PLANAR DIE CONSTRUCTION COMPLEMENTARY PNP YTPE AVAILABLE(MMBT2907A) PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE
MECHANICAL DATA CASE:SOT-23 T
MMBT2222
ART CHIP
NPN GENERAL PURPOSE AMPLIFIERNPN GENERAL PURPOSE AMPLIFIER
FEATURES
*Epitaxial planar die construction *Complementary PNP Type available(MMBT2907)
ORDERING INFORMATION
Device
Package
Shipping†
MMBT2222 SOT −23 3000 / Tape & Reel (Pb−Free)
†For information on tape and r
MMBT2222
Fairchild
NPN General Purpose AmplifierMMBT2222
MMBT2222
NPN General Purpose Amplifier
• Sourced from process 19.
C
E B
SOT-23 Mark: 1B
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collecto
MMBT2222
Galaxy Semi-Conductor
NPN General Purpose AmplifierBL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction. z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT2222
APPLICATIONS
z Use as a medium power amplifier. z Switching requiring coll
MMBT2222
Galaxy Microelectronics
NPN General Purpose AmplifierNPN General Purpose Amplifier
FEATURES
z Epitaxial planar die construction. z Ultra-small surface mount package.
Pb
Lead-free
Production specification
MMBT2222
APPLICATIONS
z Use as a medium power amplifier. z Switching requiring collector currents up to 5
MMBT2222
Weitron Technology
NPN General Purpose TransistorsMMBT2222 MMBT2222A
3 1
SOT-23
VCEO
2
u
WEITRON
http://www.weitron.com.tw
MMBT2222 MMBT2222A
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC=0.1 mAdc, VCE=