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Datasheet MMBR901 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | MMBR901 | NPN Silicon High-Frequency Transistor Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
MMBR901
Description
• High Current-Gain – Bandwidth Products • Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB (Typ) • High Power Gain – Gpe(matched)=12.0dB (Typ) @ f=1.0GHz • Operating & Storag |
 Lunsure Electronic |
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| 6 | MMBR901 | RF AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol
VCEO v CBO v EBO
'C
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
T stq
•Ther |
 Motorola Semiconductors |
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| 5 | MMBR901L | Silicon NPN RF Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
MMBR901L
DESCRIPTION ·Low Noise ·High Power Gain-
Gpe = 12.0 dB TYP. @ f = 1 GHz
APPLICATIONS ·Designed for use in high gain ,low noise , small signal
amplifiers for operation up to 2.5GHz.
ABSOLUTE MAXIMUM RATIN |
 Inchange Semiconductor |
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| 4 | MMBR901L | Trans GP BJT NPN 15V 0.03A 3-Pin SOT-23 |
 New Jersey Semiconductor |
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