MMBR5179
Motorola Semiconductors
RF Amplifier TransistorMAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, Ta = 25°C
Derate above 25°C
P
MMBR5179
BLUE ROCKET ELECTRONICS
Silicon NPN transistorMMBR5179
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 / Features 特征频率高,低噪声系数。 High fT, small NF.
用途 / Applications
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MMBR5179LT1
Microsemi
RF & MICROWAVE TRANSISTORSWWW.Microsemi .COM
PRELIMINARY
RF PRODUCTS DIVISION
MMBR5179LT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data
MMBR5179LT1
Motorola Semiconductors
RF AMPLIFIER TRANSISTOR NPN SILICONMOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR5179LT1/D
NPN Silicon High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits