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Datasheet MMBR4957 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | MMBR4957 | RF Amplifier Transistor MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO V EB
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
"Total Device Dissipation, Ta = 25°C
Derate above 25°C
PD
Storage Temperature
T stq
•Therma |
 Motorola Semiconductors |
 |
| 2 | MMBR4957LT1 | PNP Silicon High-Frequency Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR4957LT1/D
The RF Line
PNP Silicon High-Frequency Transistor
. . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount compon |
Motorola Semiconductors |
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| 1 | MMBR4957LT3 | PNP Silicon High-Frequency Transistor MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR4957LT1/D
The RF Line
PNP Silicon High-Frequency Transistor
. . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount compon |
Motorola Semiconductors |
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