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MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Ra
MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Symbol VDSS VDG
BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS tec
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 ms) Dr
Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for
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