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MMBD353 전자부품 데이터시트



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MMBD353  

Galaxy Microelectronics
Galaxy Microelectronics

MMBD353

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICATIONS z Designed primarily for UHF mixer applicatio



MMBD353  

LGE
LGE

MMBD353

Dual Hot Carrier Mixer Diodes

MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power dissipation Pd=300mW — Pb/RoHS Free Applications — Designed primarily for UHF mixer applications. Dimens



MMBD353  

Won-Top Electronics
Won-Top Electronics

MMBD353

SURFACE MOUNT SCHOTTKY BARRIER DIODE

® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance L  Low Forward Voltage  PN Junction Guard Ring for Transient and A ESD Protection  For General Purpose Switching Applicat



MMBD353LT1  

Motorola Semiconductors
Motorola Semiconductors

MMBD353LT1

(MMBD35xLT1) Dual Hot Carrier Mixer Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching



MMBD353LT1  

ON
ON

MMBD353LT1

Dual Hot Carrier Mixer Diodes

MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features 1 2 http:



MMBD353LT1  

Leshan Radio Company
Leshan Radio Company

MMBD353LT1

Dual Hot Carrier Mixer Diodes

LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts



MMBD353LT1G  

ON Semiconductor
ON Semiconductor

MMBD353LT1G

Dual Hot Carrier Mixer Diodes

MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Fea



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