MMBD353
Galaxy Microelectronics
Dual Hot Carrier Mixer DiodesDual Hot Carrier Mixer Diodes
FEATURES
z Very low capacitance— Less than 1.0pF@zero V.
Pb
Lead-free
z Low forward voltage—IF=10mA.
z Power dissipation Pd=300mW
z Pb-Free package is available.
APPLICATIONS
z Designed primarily for UHF mixer applicatio
MMBD353
LGE
Dual Hot Carrier Mixer DiodesMMBD352-355
Dual Hot Carrier Mixer Diodes
SOT-23
Features
Very low capacitance— Less than 1.0pF@zero V.
Low forward voltage—IF=10mA. Power dissipation Pd=300mW Pb/RoHS Free
Applications
Designed primarily for UHF mixer applications.
Dimens
MMBD353
Won-Top Electronics
SURFACE MOUNT SCHOTTKY BARRIER DIODE® WON-TOP ELECTRONICS
MMBD352 / 353 / 354 / 355
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Pb
Features
Very Low Capacitance
L
Low Forward Voltage PN Junction Guard Ring for Transient and
A
ESD Protection For General Purpose Switching Applicat
MMBD353LT1
Motorola Semiconductors
(MMBD35xLT1) Dual Hot Carrier Mixer DiodesMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD352LT1/D
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching
MMBD353LT1
ON
Dual Hot Carrier Mixer Diodes
MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
1 2
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MMBD353LT1
Leshan Radio Company
Dual Hot Carrier Mixer DiodesLESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
MMBD353LT1G
ON Semiconductor
Dual Hot Carrier Mixer DiodesMMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Fea