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MMBD352WT1  

Leshan Radio Company
Leshan Radio Company

MMBD352WT1

Dual Schottky Barrier Diode




MMBD352WT1  

Motorola Semiconductors
Motorola Semiconductors

MMBD352WT1

Dual Schottky Barrier Diode

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching c



MMBD352WT1  

ON
ON

MMBD352WT1

Dual Shottky Barrier Diode

MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1.0 pF @



MMBD352WT1G  

ON Semiconductor
ON Semiconductor

MMBD352WT1G

Dual Schottky Barrier Diode

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features  Very Low Capacitance − Less Than 1.0 pF @ 0 V



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