Datasheet MMA20312BT1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	MMA20312BT1	Heterojunction Bipolar Transistor Technology www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear	Freescale Semiconductor

MMA20312 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
MMA20312BT1	Heterojunction Bipolar Transistor Technology Datasheet.es Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed	Freescale Semiconductor
MMA20312BVT1	Heterojunction Bipolar Transistor Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2-- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station	Freescale Semiconductor

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