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Datasheet MJE801 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | MJE801 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications |
 Central Semiconductor |
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| 5 | MJE801 | Monolithic Construction With Built-in Base- Emitter Resistors MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Max |
 Fairchild |
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| 4 | MJE801 | (MJE800 - MJE803) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching application |
 SavantIC |
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| 3 | MJE801 | Trans Darlington NPN 60V 4A 3-Pin(3+Tab) TO-126 |
 New Jersey Semiconductor |
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