MJE13005D
Unisonic Technologies
NPN SILICON TRANSISTORUNISONIC TECHNOLOGIES CO., LTD
MJE13005D
Preliminary
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN SILICON TRANSISTOR
11
TO-220
TO-220F
DESCRIPTION
The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized
MJE13005D
Inchange Semiconductor
Silicon NPN Power TransistorINCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
MJE13005D
DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation
APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Sw
MJE13005D
SI Semiconductors
TRANSISTORS深圳深爱半导体股份有限公司 Shenzhen SI Semiconductors Co., LTD.
产品规格书 Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
MJE13005D
●特点:耐高压 开关速度快 安全工作区宽 符合 RoHS 规范
■●FEATU
MJE13005D
KEC
TRIPLE DIFFUSED NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
MJE13005D
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base driv
MJE13005DC
KEC
TRIPLE DIFFUSED NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement. MAXIMUM RATING (Ta=25 )
CH
MJE13005DF
KEC
EPITAXIAL PLANAR NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitable for half bridge light ballast Applications. Low base drive requirement.
MJE13005DF
TRIPLE DIFFUSED