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Datasheet MGP4N60ED Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP4N60ED
IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON–VOLTAGE
N–Channel Enhancement–M |
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MGP4N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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| MGP4N60E | Insulated Gate Bipolar Transistor |
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| MGP4N60E | Insulated Gate Bipolar Transistor |
 Motorola Semiconductors |
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