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MGP4N60E 전자부품 데이터시트



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MGP4N60E  

Motorola Semiconductors
Motorola Semiconductors

MGP4N60E

Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an



MGP4N60E  

ON
ON

MGP4N60E

Insulated Gate Bipolar Transistor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60E/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an



MGP4N60ED  

ON
ON

MGP4N60ED

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP4N60ED/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGP4N60ED IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW O



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