MGP4N60E
Motorola Semiconductors
Insulated Gate Bipolar TransistorMOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an
MGP4N60E
ON
Insulated Gate Bipolar TransistorMOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an
MGP4N60ED
ON
Insulated Gate Bipolar Transistor with Anti-Parallel DiodeMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGP4N60ED
IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW O